onsemi · FETs & Power MOSFETs · MPN NDH8502P
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| Current - Continuous Drain(Id) | 10A |
|---|---|
| Pd - Power Dissipation | 800mW |
| RDS(on) | 180mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Drain to Source Voltage | 30V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 340pF |
| Gate Charge(Qg) | 14.5nC@10V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 218pF |
10A 800mW 180mΩ@4.5V 3V 2 P-Channel TSOP-8-3.30mm FET, MOSFET Arrays RoHS