onsemi · FETs & Power MOSFETs · MPN NDH8302P
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| Current - Continuous Drain(Id) | 10A |
|---|---|
| Pd - Power Dissipation | 800mW |
| RDS(on) | 190mΩ@2.7V |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 20V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 85pF |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 515pF |
| Gate Charge(Qg) | 11nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 250pF |
10A 800mW 190mΩ@2.7V 1V 2 P-Channel LSOP-8 FET, MOSFET Arrays RoHS