onsemi NDF10N60ZG

onsemi · FETs & Power MOSFETs · MPN NDF10N60ZG

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Specifications

Gate Charge(Qg)68nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)178pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation39W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)750mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.645nF
TypeN-Channel

Technical details

600V 10A 4.5V 39W 750mΩ@10V 1 N-channel N-Channel TO-220FP Single FETs, MOSFETs RoHS

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