onsemi NDF04N60ZH

onsemi · FETs & Power MOSFETs · MPN NDF04N60ZH

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Specifications

Gate Charge(Qg)29nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)75pF
Current - Continuous Drain(Id)4.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)640pF
TypeN-Channel

Technical details

N-Channel 600V 4.8A 30W Through Hole TO-220FP

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