onsemi · FETs & Power MOSFETs · MPN NDDP010N25AZT4H
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| Gate Charge(Qg) | 16nC |
|---|---|
| Drain to Source Voltage | 250V |
| Output Capacitance(Coss) | 80pF |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 1W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 420mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 980pF |
| Type | N-Channel |
250V 10A 4.5V 1W 420mΩ@10V 1 N-channel N-Channel TO-252-2(DPAK) Single FETs, MOSFETs RoHS