onsemi · FETs & Power MOSFETs · MPN NDD04N50ZT4G
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| Gate Charge(Qg) | 18nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Output Capacitance(Coss) | 53pF |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 61W |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 2.7Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 370pF |
| Type | N-Channel |
500V 3A 4.5V 61W 2.7Ω@10V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS