onsemi NDC7003P

onsemi · FETs & Power MOSFETs · MPN NDC7003P

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Specifications

Current - Continuous Drain(Id)340mA
RDS(on)7Ω@4.5V
Pd - Power Dissipation960mW
Gate Threshold Voltage (Vgs(th))3.5V
Drain to Source Voltage60V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)6pF
Number1 P-Channel
Input Capacitance(Ciss)66pF
Gate Charge(Qg)2.2nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)13pF

Technical details

340mA 7Ω@4.5V 960mW 3.5V 1 P-Channel TSOT-23-6 FET, MOSFET Arrays RoHS

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