onsemi · FETs & Power MOSFETs · MPN NDB6060L
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| Gate Charge(Qg) | 60nC@5V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 48A |
| Operating Temperature - | -65℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 100W |
| Reverse Transfer Capacitance (Crss@Vds) | 400pF |
| RDS(on) | 25mΩ@5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2nF |
60V 48A 1V 100W 25mΩ@5V 1 N-channel D2PAK Single FETs, MOSFETs RoHS