onsemi · FETs & Power MOSFETs · MPN NDB6030PL
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 36nC@12V |
| Output Capacitance(Coss) | 975pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 360pF |
| RDS(on) | 21mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.57nF |
| Type | P-Channel |
30V 30A 1V 21mΩ@10V 1 P-Channel P-Channel D2PAK(TO-263AB) Single FETs, MOSFETs RoHS