onsemi NDB6030PL

onsemi · FETs & Power MOSFETs · MPN NDB6030PL

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)36nC@12V
Output Capacitance(Coss)975pF
Current - Continuous Drain(Id)30A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)360pF
RDS(on)21mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.57nF
TypeP-Channel

Technical details

30V 30A 1V 21mΩ@10V 1 P-Channel P-Channel D2PAK(TO-263AB) Single FETs, MOSFETs RoHS

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