onsemi NDB6030L

onsemi · FETs & Power MOSFETs · MPN NDB6030L

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)60nC@10V
Output Capacitance(Coss)800pF
Current - Continuous Drain(Id)52A
Operating Temperature --65℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)300pF
RDS(on)20mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.35nF
TypeN-Channel

Technical details

30V 52A 3V 75W 20mΩ@4.5V 1 N-channel N-Channel TO-263AB Single FETs, MOSFETs

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