onsemi · FETs & Power MOSFETs · MPN NDB6020P
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| Gate Charge(Qg) | 35nC |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 725pF |
| Current - Continuous Drain(Id) | 24A |
| Operating Temperature - | -65℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 70W |
| Reverse Transfer Capacitance (Crss@Vds) | 215pF |
| RDS(on) | 75mΩ@2.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.59nF |
| Type | P-Channel |
20V 24A 1V 70W 75mΩ@2.5V 1 P-Channel P-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS