onsemi · FETs & Power MOSFETs · MPN NDB5060L
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| Gate Charge(Qg) | 24nC |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 26A |
| Operating Temperature - | -65℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 68W |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF |
| RDS(on) | 35mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 840pF |
N-Channel 60V 26A 68W Surface Mount TO-263AB