onsemi MVMBF0201NLT1G

onsemi · FETs & Power MOSFETs · MPN MVMBF0201NLT1G

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Specifications

Gate Charge(Qg)1.4nC
Drain to Source Voltage20V
Output Capacitance(Coss)25pF
Current - Continuous Drain(Id)300mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation225mW
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)750mΩ;1Ω
Number1 N-channel
Input Capacitance(Ciss)45pF
TypeN-Channel

Technical details

N-Channel 20V 300mA 225mW Surface Mount SOT-23

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