onsemi MUN5312DW1T2G

onsemi · Transistors (BJTs) · MPN MUN5312DW1T2G

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Specifications

DC Current Gain60
Input Resistor22kΩ
Number-
Pd - Power Dissipation250mW
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V

Technical details

60 250mW 100mA 50V SC-88-6(SC-70-6) Bipolar Transistor Arrays, Pre-Biased RoHS

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