onsemi MUN5240T1G

onsemi · Transistors (BJTs) · MPN MUN5240T1G

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain120
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Input Resistor61.1kΩ
Number-
Pd - Power Dissipation202mW
Input Voltage (VI(on)@Ic,Vce)4V@10mA,0.3V
Voltage - Input(Max)(VI(off))500mV@100uA,5.0V

Technical details

50V 120 100mA 202mW SOT-323-3 Single, Pre-Biased Bipolar Transistors RoHS

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