onsemi MUN5238T1G

onsemi · Transistors (BJTs) · MPN MUN5238T1G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO-
DC Current Gain350
Operating Temperature-
Vce Saturation(VCE(sat))250mV@10mA,1mA
Current - Collector(Ic)100mA
Output Voltage(VO(on))200mV
Input Resistor2.2kΩ
Resistor Ratio-
Pd - Power Dissipation310mW

Technical details

50V 350 100mA 310mW NPN 1 NPN (Pre-Biased) SC-70-3 Single, Pre-Biased Bipolar Transistors RoHS

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