onsemi MUN5133DW1T1G

onsemi · Transistors (BJTs) · MPN MUN5133DW1T1G

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Specifications

Current - Collector Cutoff100nA
DC Current Gain80
Vce Saturation(VCE(sat))250mV
Output Voltage(VO(on))200mV
Input Resistor4.7kΩ
Resistor Ratio0.1
Pd - Power Dissipation250mW
Input Voltage (VI(on)@Ic,Vce)910mV@5mA,0.2V
Voltage - Input(Max)(VI(off))670mV@100uA,5V
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
typePNP

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 250mW Surface Mount SOT-363

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