onsemi MUN5131DW1T1G

onsemi · Transistors (BJTs) · MPN MUN5131DW1T1G

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Specifications

DC Current Gain8
Input Resistor2.2kΩ
Number-
Pd - Power Dissipation250mW
Voltage - Input(Max)(VI(off))1.2V@1mA,5V
Input Voltage (VI(on)@Ic,Vce)1.9V@20mA,0.2V
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V

Technical details

8 250mW 100mA 50V SOT-363 Bipolar Transistor Arrays, Pre-Biased RoHS

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