onsemi · Transistors (BJTs) · MPN MUN5116DW1T1G
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| DC Current Gain | 160 |
|---|---|
| Input Resistor | 4.7kΩ |
| Number | - |
| Pd - Power Dissipation | 250mW |
| Voltage - Input(Max)(VI(off)) | 580mV@100uA,5.0V |
| Input Voltage (VI(on)@Ic,Vce) | 1V@10mA,0.2V |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 50V |
160 250mW 100mA 50V SOT-363 Bipolar Transistor Arrays, Pre-Biased RoHS