onsemi · Transistors (BJTs) · MPN MUN2213T1G
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| Collector - Emitter Voltage VCEO | 50V |
|---|---|
| DC Current Gain | 80 |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 100mA |
| Output Voltage(VO(on)) | - |
| Input Resistor | 47kΩ |
| Resistor Ratio | 1 |
| Number | 1 NPN (Pre-Biased) |
| Pd - Power Dissipation | 230mW |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V |
| Input Voltage (VI(on)@Ic,Vce) | 3V@2mA,0.3V |
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 100mA 230mW Surface Mount SC-59