onsemi · Transistors (BJTs) · MPN MUN2212T1G
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| Current - Collector Cutoff | 100nA |
|---|---|
| Collector - Emitter Voltage VCEO | 50V |
| DC Current Gain | 60 |
| Vce Saturation(VCE(sat)) | 250mV |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 100mA |
| Input Resistor | 22kΩ |
| type | NPN |
| Resistor Ratio | 1 |
| Number | 1 NPN (Pre-Biased) |
| Pd - Power Dissipation | 338mW |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V |
50V 60 100mA NPN 1 NPN (Pre-Biased) 338mW SC-59 Single, Pre-Biased Bipolar Transistors RoHS