onsemi · FETs & Power MOSFETs · MPN MTY30N50E
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| Gate Charge(Qg) | 350nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Output Capacitance(Coss) | 1.2nF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 250pF |
| RDS(on) | 150mΩ@10V |
| Input Capacitance(Ciss) | 10.08nF |
| Type | N-Channel |
500V 30A 4V 300W 150mΩ@10V N-Channel Single FETs, MOSFETs