onsemi · FETs & Power MOSFETs · MPN MTY14N100E
No reviews yet — be the first to review onsemi MTY14N100E.
| Gate Charge(Qg) | 142nC@10V |
|---|---|
| Drain to Source Voltage | 1kV |
| Current - Continuous Drain(Id) | 14A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 61pF |
| RDS(on) | 800mΩ@10V |
| Input Capacitance(Ciss) | 7.23nF |
| Type | N-Channel |
1kV 14A 4V 300W 800mΩ@10V N-Channel Single FETs, MOSFETs