onsemi · FETs & Power MOSFETs · MPN MTW8N50E
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 125nC@10V |
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 8A |
| Output Capacitance(Coss) | 264pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 150W |
| RDS(on) | 800mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 108pF |
| Number | - |
| Input Capacitance(Ciss) | 1.8nF |
500V 8A 2V 150W 800mΩ@10V N-Channel Single FETs, MOSFETs