onsemi MTW7N80E

onsemi · FETs & Power MOSFETs · MPN MTW7N80E

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Specifications

Drain to Source Voltage800V
Gate Charge(Qg)105nC@10V
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation180W
Reverse Transfer Capacitance (Crss@Vds)90pF
RDS(on)1Ω@10V
Input Capacitance(Ciss)4.16nF
TypeN-Channel

Technical details

800V 7A 4V 180W 1Ω@10V N-Channel Single FETs, MOSFETs

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