onsemi · FETs & Power MOSFETs · MPN MTW7N80E
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| Drain to Source Voltage | 800V |
|---|---|
| Gate Charge(Qg) | 105nC@10V |
| Current - Continuous Drain(Id) | 7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 180W |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF |
| RDS(on) | 1Ω@10V |
| Input Capacitance(Ciss) | 4.16nF |
| Type | N-Channel |
800V 7A 4V 180W 1Ω@10V N-Channel Single FETs, MOSFETs