onsemi · FETs & Power MOSFETs · MPN MTV32N25E
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| Drain to Source Voltage | 250V |
|---|---|
| Gate Charge(Qg) | 97nC@10V |
| Output Capacitance(Coss) | 1.02nF |
| Current - Continuous Drain(Id) | 32A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 250W |
| RDS(on) | 80mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 370pF |
| Input Capacitance(Ciss) | 5.32nF |
| Type | N-Channel |
250V 32A 4V 250W 80mΩ@10V N-Channel Single FETs, MOSFETs RoHS