onsemi · FETs & Power MOSFETs · MPN MTV16N50E
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| Gate Charge(Qg) | 65nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Output Capacitance(Coss) | 560pF |
| Current - Continuous Drain(Id) | 16A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 180W |
| RDS(on) | 400mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 448pF |
| Input Capacitance(Ciss) | 4.48nF |
| Type | N-Channel |
500V 16A 4V 180W 400mΩ@10V N-Channel Single FETs, MOSFETs