onsemi · FETs & Power MOSFETs · MPN MTP1N60E
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 10nC@10V |
| Output Capacitance(Coss) | 40pF |
| Current - Continuous Drain(Id) | 1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 50W |
| RDS(on) | 8Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| Input Capacitance(Ciss) | 310pF |
| Type | N-Channel |
600V 1A 4V 50W 8Ω@10V N-Channel Single FETs, MOSFETs