onsemi MTP10N40E

onsemi · FETs & Power MOSFETs · MPN MTP10N40E

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Specifications

Drain to Source Voltage400V
Gate Charge(Qg)63nC@10V
Current - Continuous Drain(Id)10A
Operating Temperature --65℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)550mΩ@10V
Input Capacitance(Ciss)1.57nF
TypeN-Channel

Technical details

400V 10A 4V 125W 550mΩ@10V N-Channel Single FETs, MOSFETs

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