onsemi · FETs & Power MOSFETs · MPN MTDF1C02HDR2
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| Gate Charge(Qg) | 7.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 2.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 1.25W |
| RDS(on) | 120mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF |
| Input Capacitance(Ciss) | 145pF |
| Type | N-Channel + P-Channel |
20V 2.8A 1.4V 1.25W 120mΩ@4.5V N-Channel + P-Channel Single FETs, MOSFETs