onsemi · FETs & Power MOSFETs · MPN MTD6N20E1
No reviews yet — be the first to review onsemi MTD6N20E1.
| Drain to Source Voltage | 200V |
|---|---|
| Gate Charge(Qg) | 21nC@10V |
| Output Capacitance(Coss) | 130pF |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 1.75W |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| RDS(on) | 700mΩ@10V |
| Input Capacitance(Ciss) | 480pF |
| Type | N-Channel |
200V 6A 4V 1.75W 700mΩ@10V N-Channel Single FETs, MOSFETs