onsemi · FETs & Power MOSFETs · MPN MTD4N20E1
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| Gate Charge(Qg) | 14nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 80pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 40W |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 1.2Ω@10V |
| Input Capacitance(Ciss) | 430pF |
| Type | N-Channel |
200V 4A 4V 40W 1.2Ω@10V N-Channel Single FETs, MOSFETs RoHS