onsemi · FETs & Power MOSFETs · MPN MTD3N25E1
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| Current - Continuous Drain(Id) | 3A |
|---|---|
| Pd - Power Dissipation | 1.75W |
| RDS(on) | 4Ω@10V |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Drain to Source Voltage | 250V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| Input Capacitance(Ciss) | 430pF |
| Gate Charge(Qg) | 15nC@10V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 75pF |
3A 1.75W 4Ω@10V 4V FET, MOSFET Arrays RoHS