onsemi MTD3302T4

onsemi · FETs & Power MOSFETs · MPN MTD3302T4

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)47nC@15V
Current - Continuous Drain(Id)18.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation5W
RDS(on)10mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)185pF
Number1 N-channel
Input Capacitance(Ciss)1.76nF

Technical details

30V 18.3A 1.9V 5W 10mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS

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