onsemi MTD2N40ET4

onsemi · FETs & Power MOSFETs · MPN MTD2N40ET4

No reviews yet — be the first to review onsemi MTD2N40ET4.

Specifications

Gate Charge(Qg)8.6nC@10V
Drain to Source Voltage400V
Output Capacitance(Coss)40pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)3.5Ω@10V
Input Capacitance(Ciss)320pF
TypeN-Channel

Technical details

400V 2A 4V 40W 3.5Ω@10V N-Channel Single FETs, MOSFETs

Related FETs & Power MOSFETs