onsemi · FETs & Power MOSFETs · MPN MTB6N60ET4
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| Current - Continuous Drain(Id) | 6A |
|---|---|
| Pd - Power Dissipation | 125W |
| RDS(on) | 8.6Ω@10V |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Drain to Source Voltage | 600V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 217pF |
| Input Capacitance(Ciss) | 1.498nF |
| Gate Charge(Qg) | 50nC@10V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 2.1nF |
6A 125W 8.6Ω@10V 4V FET, MOSFET Arrays