onsemi · FETs & Power MOSFETs · MPN MTB55N06ZT4
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 56nC@10V |
| Current - Continuous Drain(Id) | 55A |
| Output Capacitance(Coss) | 730pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 113W |
| Reverse Transfer Capacitance (Crss@Vds) | 238pF |
| RDS(on) | 4mΩ@10V |
| Input Capacitance(Ciss) | 1.95nF |
| Type | N-Channel |
60V 55A 4V 113W 4mΩ@10V N-Channel Single FETs, MOSFETs