onsemi MTB55N06ZT4

onsemi · FETs & Power MOSFETs · MPN MTB55N06ZT4

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)56nC@10V
Current - Continuous Drain(Id)55A
Output Capacitance(Coss)730pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation113W
Reverse Transfer Capacitance (Crss@Vds)238pF
RDS(on)4mΩ@10V
Input Capacitance(Ciss)1.95nF
TypeN-Channel

Technical details

60V 55A 4V 113W 4mΩ@10V N-Channel Single FETs, MOSFETs

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