onsemi · FETs & Power MOSFETs · MPN MTB52N06VL
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| Gate Charge(Qg) | 90nC@5V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 770pF |
| Current - Continuous Drain(Id) | 52A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 3W |
| Reverse Transfer Capacitance (Crss@Vds) | 340pF |
| RDS(on) | 25mΩ@5V |
| Input Capacitance(Ciss) | 2.66nF |
| Type | N-Channel |
60V 52A 2V 3W 25mΩ@5V N-Channel Single FETs, MOSFETs