onsemi · FETs & Power MOSFETs · MPN MTB3N60E
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 31nC@10V |
| Output Capacitance(Coss) | 105pF |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 75W |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF |
| RDS(on) | 3.5Ω@10V |
| Input Capacitance(Ciss) | 770pF |
| Type | N-Channel |
600V 3A 4V 75W 3.5Ω@10V N-Channel Single FETs, MOSFETs