onsemi · FETs & Power MOSFETs · MPN MTB30P06V
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| Gate Charge(Qg) | 80nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 310pF |
| RDS(on) | 80mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.19nF |
60V 30A 4V 125W 80mΩ@10V 1 P-Channel Single FETs, MOSFETs