onsemi · FETs & Power MOSFETs · MPN MTB29N15ET4
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| Drain to Source Voltage | 150V |
|---|---|
| Gate Charge(Qg) | 120nC@10V |
| Output Capacitance(Coss) | 630pF |
| Current - Continuous Drain(Id) | 29A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 260pF |
| RDS(on) | 70mΩ@10V |
| Input Capacitance(Ciss) | 3.22nF |
| Type | N-Channel |
150V 29A 4V 2.5W 70mΩ@10V N-Channel Single FETs, MOSFETs