onsemi · FETs & Power MOSFETs · MPN MTB16N25E
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| Gate Charge(Qg) | 70nC@10V |
|---|---|
| Drain to Source Voltage | 250V |
| Current - Continuous Drain(Id) | 16A |
| Output Capacitance(Coss) | 390pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 125W |
| RDS(on) | 250mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 260pF |
| Input Capacitance(Ciss) | 2.18nF |
| Type | N-Channel |
250V 16A 4V 125W 250mΩ@10V N-Channel Single FETs, MOSFETs