onsemi · FETs & Power MOSFETs · MPN MTB15N06VT4
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 70nC@10V |
| Output Capacitance(Coss) | 200pF |
| Current - Continuous Drain(Id) | 15A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 55W |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 2.2Ω@10V |
| Input Capacitance(Ciss) | 660pF |
| Type | N-Channel |
60V 15A 4V 55W 2.2Ω@10V N-Channel Single FETs, MOSFETs