onsemi · FETs & Power MOSFETs · MPN MTB10N40ET4
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| Gate Charge(Qg) | 63nC@10V |
|---|---|
| Drain to Source Voltage | 400V |
| Output Capacitance(Coss) | 325pF |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| RDS(on) | 550mΩ@10V |
| Input Capacitance(Ciss) | 2.2nF |
| Type | N-Channel |
400V 10A 4V 125W 550mΩ@10V N-Channel D2PAK Single FETs, MOSFETs