onsemi MSD602-RT1G

onsemi · Transistors (BJTs) · MPN MSD602-RT1G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO50V
DC Current Gain120
Pd - Power Dissipation200mW
typeNPN
Current - Collector(Ic)500mA
Operating Temperature-
Vce Saturation(VCE(sat))600mV

Technical details

50V 120 NPN 500mA SC-59 Single Bipolar Transistors RoHS

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