onsemi · FETs & Power MOSFETs · MPN MMFT2N25ET3
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| Drain to Source Voltage | 250V |
|---|---|
| Gate Charge(Qg) | 10nC@10V |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 770mW |
| RDS(on) | 4Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| Input Capacitance(Ciss) | 137pF |
| Type | N-Channel |
250V 2A 4V 770mW 4Ω@10V N-Channel Single FETs, MOSFETs RoHS