onsemi · FETs & Power MOSFETs · MPN MMFT1N10ET3
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 7nC@10V |
| Current - Continuous Drain(Id) | 1A |
| Operating Temperature - | -65℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 800mW |
| RDS(on) | 250mΩ@10V |
| Type | N-Channel |
100V 1A 4.5V 800mW 250mΩ@10V N-Channel Single FETs, MOSFETs