onsemi MMFT1N10ET1

onsemi · FETs & Power MOSFETs · MPN MMFT1N10ET1

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Specifications

Drain to Source Voltage100V
Current - Continuous Drain(Id)1A
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation800mW
RDS(on)250mΩ@10V
TypeN-Channel

Technical details

100V 1A 4.5V 800mW 250mΩ@10V N-Channel Single FETs, MOSFETs

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