onsemi · Transistors (BJTs) · MPN MMBTH10-4LT1G
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| Emitter-Base Voltage(Vebo) | 3V |
|---|---|
| Current - Collector Cutoff | 100nA |
| Collector - Emitter Voltage VCEO | 25V |
| DC Current Gain | 120 |
| Pd - Power Dissipation | 225mW |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | - |
| Transition frequency(fT) | 800MHz |
| Vce Saturation(VCE(sat)) | 500mV |
| type | NPN |
| Number | 1 NPN |
Bipolar (BJT) Transistor NPN 25V 800MHz 225mW Surface Mount SOT-23