onsemi MMBT5089

onsemi · Transistors (BJTs) · MPN MMBT5089

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO25V
DC Current Gain400
Pd - Power Dissipation350mW
typeNPN
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

25V 400 NPN 100mA SOT-23 Single Bipolar Transistors RoHS

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